SI4435BDY-T1-E3

SI4435BDY-T1-E3

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SI4435BDY-T1-E3
Описание:
MOSFET P-CH 30V 7A 8SO
Упаковка:
Tape & Reel (TR)
Datasheet:
SI4435BDY-T1-E3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SI4435BDY-T1-E3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:9dc91beecc2f6baf922e9c59625131e5
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:61deda35327692f9e7deb6142a2af98d
Vgs(th) (Max) @ Id:66756bbbd2b15b665d5248f5ca1758a1
Gate Charge (Qg) (Max) @ Vgs:db9f04e415a015c155393f8ee8a7352c
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:336d5ebc5436534e61d16e63ddfca327
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):a8c66c4442cd4a3041823bb4b268783b
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:f540a82a31d84dfe2e0dd06b324c8a8f
Package / Case:f80d2dd5409d1e9f8a546eb6d6a8728d
In Stock: 0
Stock:
0 Can Ship Immediately
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