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See Product Specifications
| номер части: | SI4666DY-T1-GE3 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Vishay Siliconix |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 622fb57dec9cae5648afabcd559f8856 |
| Current - Continuous Drain (Id) @ 25°C: | ac5a9e7ae9b679dbf33c88a3e1009b7e |
| Drive Voltage (Max Rds On, Min Rds On): | b076aa5277458f91fd2c66160075162b |
| Rds On (Max) @ Id, Vgs: | 86c47a82b90f2f5169d847a42a703828 |
| Vgs(th) (Max) @ Id: | f710eedc1bf5fdb1a1e1a08d92eb0502 |
| Gate Charge (Qg) (Max) @ Vgs: | 80219777f4f5034255c6ec22dd89c0f5 |
| Vgs (Max): | ed5450af4f622d5d61945c0592c793a8 |
| Input Capacitance (Ciss) (Max) @ Vds: | 103e99b8c4af2901b9423ea6f83e6884 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 94c77998c218f976c4b35392b4a61cc8 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | f540a82a31d84dfe2e0dd06b324c8a8f |
| Package / Case: | f80d2dd5409d1e9f8a546eb6d6a8728d |
