SI4829DY-T1-E3

SI4829DY-T1-E3

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SI4829DY-T1-E3
Описание:
MOSFET P-CH 20V 2A 8SO
Упаковка:
Tape & Reel (TR)
Datasheet:
SI4829DY-T1-E3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SI4829DY-T1-E3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:a94e61109c54813522be818a0ece14f0
Drive Voltage (Max Rds On, Min Rds On):ad55046ae2fc0687ff363bc051e1507d
Rds On (Max) @ Id, Vgs:623fcf4c822c2427de329ab369ab2a33
Vgs(th) (Max) @ Id:f710eedc1bf5fdb1a1e1a08d92eb0502
Gate Charge (Qg) (Max) @ Vgs:c2264d71ed8c8dffa70fb3c01990398c
Vgs (Max):ed5450af4f622d5d61945c0592c793a8
Input Capacitance (Ciss) (Max) @ Vds:8736dea334fd68907f8ea830defa4668
FET Feature:6ddb2436bf1d98a374a4c8e5a45f901a
Power Dissipation (Max):4ff6c17caf233f94e2d3f47a2e4c5c42
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:f540a82a31d84dfe2e0dd06b324c8a8f
Package / Case:f80d2dd5409d1e9f8a546eb6d6a8728d
In Stock: 0
Stock:
0 Can Ship Immediately
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