SI5401DC-T1-GE3

SI5401DC-T1-GE3

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SI5401DC-T1-GE3
Описание:
MOSFET P-CH 20V 5.2A 1206-8
Упаковка:
Tape & Reel (TR)
Datasheet:
SI5401DC-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SI5401DC-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:f63cb217f28ee482f54aec5e95e1c8d0
Drive Voltage (Max Rds On, Min Rds On):72f93dd3e24aa2b695818cce6ee9270b
Rds On (Max) @ Id, Vgs:8d4fc9da1b8a35c3f68bedbff38cd350
Vgs(th) (Max) @ Id:fb74aa2ff10bb77cff79f565b135beed
Gate Charge (Qg) (Max) @ Vgs:bfb0e5e5d953b10673e11a0dbf39483e
Vgs (Max):141ce97fa4644284a9f0bfb5e7811ba1
Input Capacitance (Ciss) (Max) @ Vds:336d5ebc5436534e61d16e63ddfca327
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):be803bd4e0936fd755166f5b6f8436f1
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:cb9dd16c5e3292c6317edbe6b4588fb1
Package / Case:329165b0aed20d92ef6c9391381735e0
In Stock: 0
Stock:
0 Can Ship Immediately
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