SI6473DQ-T1-E3

SI6473DQ-T1-E3

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SI6473DQ-T1-E3
Описание:
MOSFET P-CH 20V 6.2A 8TSSOP
Упаковка:
Tape & Reel (TR)
Datasheet:
SI6473DQ-T1-E3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SI6473DQ-T1-E3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:6d0b13a6679111c9278b3834a4be13d1
Drive Voltage (Max Rds On, Min Rds On):72f93dd3e24aa2b695818cce6ee9270b
Rds On (Max) @ Id, Vgs:29b13fd9b0ed1fc56b849db8934ef16d
Vgs(th) (Max) @ Id:6faa1a3e09e41944e320712dbd203d98
Gate Charge (Qg) (Max) @ Vgs:6cad07b911c8b5a720a1a7ca6bdd9478
Vgs (Max):141ce97fa4644284a9f0bfb5e7811ba1
Input Capacitance (Ciss) (Max) @ Vds:336d5ebc5436534e61d16e63ddfca327
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):8458a51861323b19df9ac5deb9954178
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:c7e6aa666302fa20c9ece91146965468
Package / Case:e03a7a6d310a992f91d9ce6fc79d28ea
In Stock: 0
Stock:
0 Can Ship Immediately
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