SI7872DP-T1-GE3

SI7872DP-T1-GE3

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SI7872DP-T1-GE3
Описание:
MOSFET 2N-CH 30V 6.4A PPAK SO-8
Упаковка:
Tape & Reel (TR)
Datasheet:
SI7872DP-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SI7872DP-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Arrays
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:da0a923d973fa5e86098d39decb3060d
FET Feature:b1bdfad45563eb49e8648bcec381ba5b
Drain to Source Voltage (Vdss):9ec92e92d0efca44e7ef022a61c49068
Current - Continuous Drain (Id) @ 25°C:d2196d8d91fe84367d3b4af42efe6cbd
Rds On (Max) @ Id, Vgs:5eb662108caa10984ef47798e3b82e0a
Vgs(th) (Max) @ Id:66756bbbd2b15b665d5248f5ca1758a1
Gate Charge (Qg) (Max) @ Vgs:db22f7abe4e7e54046730bb3c1d1dbe6
Input Capacitance (Ciss) (Max) @ Vds:336d5ebc5436534e61d16e63ddfca327
Power - Max:8ffb4048bb4e4a312e4793176096e4ce
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:1e46c7d762b200942357eb407c9f7e6d
Supplier Device Package:1e46c7d762b200942357eb407c9f7e6d
In Stock: 0
Stock:
0 Can Ship Immediately
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