SI8416DB-T2-E1

SI8416DB-T2-E1

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SI8416DB-T2-E1
Описание:
MOSFET N-CH 8V 16A 6MICRO FOOT
Упаковка:
Tape & Reel (TR)
Datasheet:
SI8416DB-T2-E1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SI8416DB-T2-E1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):7d3364268c2b8854793e00b793cae274
Current - Continuous Drain (Id) @ 25°C:0ce64d6e046c1eac90dde8af59f23c07
Drive Voltage (Max Rds On, Min Rds On):2a209c50c2dd1678cb3d568dbbce6592
Rds On (Max) @ Id, Vgs:b20014742e9fd36cc61b76dfd608830f
Vgs(th) (Max) @ Id:ca87f9064cd95fc0bb3d9137ab50b2aa
Gate Charge (Qg) (Max) @ Vgs:a7514b6441d2dac32da5536dd0a16cfe
Vgs (Max):051eb3694b8dd0dc96802e319d53b81e
Input Capacitance (Ciss) (Max) @ Vds:ec3f1f4edf3f981dfdc4285b0aaede58
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):754e44850a901d590da0229bf70c31ed
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:661ac98c474617dfbf3c958d17fb2ca6
Package / Case:b680807f8d9350117f1fe11ed3c4dd77
In Stock: 0
Stock:
0 Can Ship Immediately
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