SI8800EDB-T2-E1

SI8800EDB-T2-E1

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SI8800EDB-T2-E1
Описание:
MOSFET N-CH 20V 4MICROFOOT
Упаковка:
Tape & Reel (TR)
Datasheet:
SI8800EDB-T2-E1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SI8800EDB-T2-E1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:49be2d3befbb5f287b3239b421243897
Drive Voltage (Max Rds On, Min Rds On):c20b0e732e8e50ac667a2996b676523a
Rds On (Max) @ Id, Vgs:623bc0ef770768fda09ffcaaa671f69a
Vgs(th) (Max) @ Id:fb74aa2ff10bb77cff79f565b135beed
Gate Charge (Qg) (Max) @ Vgs:ec643dd088ed98c348c4c59ddff4ed3f
Vgs (Max):141ce97fa4644284a9f0bfb5e7811ba1
Input Capacitance (Ciss) (Max) @ Vds:336d5ebc5436534e61d16e63ddfca327
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):ae2350350ba6e5a69d2dc91b08eae7b5
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:1aaf8f68e6ea8b249cbd6150c73aff95
Package / Case:55fedae3a6d7bc6ef8c299404480e544
In Stock: 0
Stock:
0 Can Ship Immediately
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