SI8851EDB-T2-E1

SI8851EDB-T2-E1

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SI8851EDB-T2-E1
Описание:
MOSFET P-CH 20V PWR MICRO FOOT
Упаковка:
Tape & Reel (TR)
Datasheet:
SI8851EDB-T2-E1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SI8851EDB-T2-E1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:69851e815079d543f159ce0c77452baa
Drive Voltage (Max Rds On, Min Rds On):72f93dd3e24aa2b695818cce6ee9270b
Rds On (Max) @ Id, Vgs:ad436c856c3041a6b84ab93d23093ab6
Vgs(th) (Max) @ Id:fb74aa2ff10bb77cff79f565b135beed
Gate Charge (Qg) (Max) @ Vgs:566b5bd3282c9ef1c70350f029554e17
Vgs (Max):141ce97fa4644284a9f0bfb5e7811ba1
Input Capacitance (Ciss) (Max) @ Vds:2ef4a346e7b533b43e1993cafb9e4969
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):18f5d03a0c08861ce32d3cda48539f26
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:8bdff199fb330b83af383f8a3c8aa484
Package / Case:54433d34e61b68fd05d0ca766dec236a
In Stock: 0
Stock:
0 Can Ship Immediately
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