SIA406DJ-T1-GE3

SIA406DJ-T1-GE3

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SIA406DJ-T1-GE3
Описание:
MOSFET N-CH 12V 4.5A PPAK SC70-6
Упаковка:
Tape & Reel (TR)
Datasheet:
SIA406DJ-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIA406DJ-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):fd06a160a7273ee2b718dbba07f948a2
Current - Continuous Drain (Id) @ 25°C:bb8f888d0272cac2ba0c50c267f568d7
Drive Voltage (Max Rds On, Min Rds On):72f93dd3e24aa2b695818cce6ee9270b
Rds On (Max) @ Id, Vgs:c85c86e950d3d629a36c5479d1013908
Vgs(th) (Max) @ Id:fb74aa2ff10bb77cff79f565b135beed
Gate Charge (Qg) (Max) @ Vgs:f3078355a409d288d6e8b27d375a4d8d
Vgs (Max):141ce97fa4644284a9f0bfb5e7811ba1
Input Capacitance (Ciss) (Max) @ Vds:27f2d181c57ee28e93843003d656f15d
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):75787a4344f173cc8e2c9e7678b73b3f
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:98d85f5568654e09ffeef6b181653587
Package / Case:98d85f5568654e09ffeef6b181653587
In Stock: 0
Stock:
0 Can Ship Immediately
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