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See Product Specifications
| номер части: | SIA4265EDJ-T1-GE3 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Vishay Siliconix |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 9945a529f9f3f7e23d6cd49cab56133a |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 1d4b1d1d0414ed964cb9de7f5a150f63 |
| Current - Continuous Drain (Id) @ 25°C: | 1ba6c1f9a2e027ddf1aca3e57c34178e |
| Drive Voltage (Max Rds On, Min Rds On): | 72f93dd3e24aa2b695818cce6ee9270b |
| Rds On (Max) @ Id, Vgs: | e67f8dc91d7ffd6ba19b87561ce9dd63 |
| Vgs(th) (Max) @ Id: | fb74aa2ff10bb77cff79f565b135beed |
| Gate Charge (Qg) (Max) @ Vgs: | dc82ecc97e5111a1a565b115a22b3692 |
| Vgs (Max): | 141ce97fa4644284a9f0bfb5e7811ba1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 928d6f7adcdb46cb274b6047e6625587 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 9d61c02aa38fa3e585c4e51424d891c1 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 98d85f5568654e09ffeef6b181653587 |
| Package / Case: | 98d85f5568654e09ffeef6b181653587 |
