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See Product Specifications
| номер части: | SIA445EDJT-T1-GE3 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Vishay Siliconix |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 9945a529f9f3f7e23d6cd49cab56133a |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 1d4b1d1d0414ed964cb9de7f5a150f63 |
| Current - Continuous Drain (Id) @ 25°C: | c98954c6bcd184452c80864782c9ab71 |
| Drive Voltage (Max Rds On, Min Rds On): | ad55046ae2fc0687ff363bc051e1507d |
| Rds On (Max) @ Id, Vgs: | 5edcf2f7c4c16f86e90f248cc806aa51 |
| Vgs(th) (Max) @ Id: | b84520e401b6763187bb539da6d1dfbf |
| Gate Charge (Qg) (Max) @ Vgs: | 30d42a4f57ee9fd79c5d90774c43a790 |
| Vgs (Max): | ed5450af4f622d5d61945c0592c793a8 |
| Input Capacitance (Ciss) (Max) @ Vds: | d68efaf39ad12d9279198ac7d38ba0fe |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 765b081da80024c9d9010a7aebb222bc |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 790be0a7e0d7349e443eaa5ad8e466c8 |
| Package / Case: | 98d85f5568654e09ffeef6b181653587 |
