SIA461DJ-T1-GE3

SIA461DJ-T1-GE3

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SIA461DJ-T1-GE3
Описание:
MOSFET P-CH 20V 12A PPAK SC70-6
Упаковка:
Tape & Reel (TR)
Datasheet:
SIA461DJ-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIA461DJ-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:c98954c6bcd184452c80864782c9ab71
Drive Voltage (Max Rds On, Min Rds On):72f93dd3e24aa2b695818cce6ee9270b
Rds On (Max) @ Id, Vgs:33ad34ab8beb32467b664c98886a3358
Vgs(th) (Max) @ Id:fb74aa2ff10bb77cff79f565b135beed
Gate Charge (Qg) (Max) @ Vgs:f252d0d3a6da6ad49bb1de1cd2d8a496
Vgs (Max):141ce97fa4644284a9f0bfb5e7811ba1
Input Capacitance (Ciss) (Max) @ Vds:b1ba3f5e55b906329a7a494d9b97c3ab
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):c9b3b8e55798150dedc4b976401a730e
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:98d85f5568654e09ffeef6b181653587
Package / Case:98d85f5568654e09ffeef6b181653587
In Stock: 0
Stock:
0 Can Ship Immediately
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