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See Product Specifications
| номер части: | SIA483ADJ-T1-GE3 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Vishay Siliconix |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 9945a529f9f3f7e23d6cd49cab56133a |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 6f065265b5ad79aa8b78335bb14c6420 |
| Current - Continuous Drain (Id) @ 25°C: | 65a66302a4a2a412f4b7bb5c863b601f |
| Drive Voltage (Max Rds On, Min Rds On): | 214881f189d1d05281deda79f8c1bf77 |
| Rds On (Max) @ Id, Vgs: | 7634ec0f0dd39448ee971aaeb1d0eb43 |
| Vgs(th) (Max) @ Id: | bae68a70e94fb31c33c772f4fdf89b99 |
| Gate Charge (Qg) (Max) @ Vgs: | 3c309df0dab075d5fb4f85fd7f1eb952 |
| Vgs (Max): | 3f0ef380b6b8a02f744cc203d69cd6a5 |
| Input Capacitance (Ciss) (Max) @ Vds: | 228e0176181335da348297df7e81fcec |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | c9b3b8e55798150dedc4b976401a730e |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 98d85f5568654e09ffeef6b181653587 |
| Package / Case: | 98d85f5568654e09ffeef6b181653587 |
