SIDR610DP-T1-GE3

SIDR610DP-T1-GE3

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SIDR610DP-T1-GE3
Описание:
MOSFET N-CH 200V 8.9A/39.6A PPAK
Упаковка:
Tape & Reel (TR)
Datasheet:
SIDR610DP-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIDR610DP-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):b86aa01bc1f9484a191794819edcfc06
Current - Continuous Drain (Id) @ 25°C:387e76829d54b920b354571ff1704dc9
Drive Voltage (Max Rds On, Min Rds On):629920a74232f30d2b06ff2b54267c3b
Rds On (Max) @ Id, Vgs:96db4916c8db4c472fc06fca7e7fd55e
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:9f1b4cf224c82abf492d26a94856e61a
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:ff75aa7a8a2375678474809a79dc58b9
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):692f76569b0c43c334f2379eb2883833
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:8bbbeed690bb4914da195644f5724eda
Package / Case:cdb17de75fc2484291d63ea33c94254f
In Stock: 0
Stock:
0 Can Ship Immediately
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