SIDR626LDP-T1-RE3

SIDR626LDP-T1-RE3

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SIDR626LDP-T1-RE3
Описание:
MOSFET N-CH 60V 45.6A/2.4A PPAK
Упаковка:
Tape & Reel (TR)
Datasheet:
SIDR626LDP-T1-RE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIDR626LDP-T1-RE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:5365513593a7c7c79ed051a4fbbcdbf7
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:26255d8c7348ef5533f56ad68db9f2c1
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:cb6b6807e1d1e39a2f8f3546d20e3bed
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:956086b95718fc7d83b0fd6969e5f99d
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):692f76569b0c43c334f2379eb2883833
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:8bbbeed690bb4914da195644f5724eda
Package / Case:cdb17de75fc2484291d63ea33c94254f
In Stock: 0
Stock:
0 Can Ship Immediately
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