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See Product Specifications
| номер части: | SIE810DF-T1-GE3 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Vishay Siliconix |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 1d4b1d1d0414ed964cb9de7f5a150f63 |
| Current - Continuous Drain (Id) @ 25°C: | 1551d0db07ff2a9a5117bf21afa2832a |
| Drive Voltage (Max Rds On, Min Rds On): | b076aa5277458f91fd2c66160075162b |
| Rds On (Max) @ Id, Vgs: | e4daa4006fabd60d3b4f75af2e20b31a |
| Vgs(th) (Max) @ Id: | 47646805bddee9d06a7f0cc80c73c037 |
| Gate Charge (Qg) (Max) @ Vgs: | 8ed1cd6c943ab1d5bedc44416252abf5 |
| Vgs (Max): | ed5450af4f622d5d61945c0592c793a8 |
| Input Capacitance (Ciss) (Max) @ Vds: | ee284c62a78cb3ff6f52668ce747f13c |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | b21ad21cb623ce9b0f07c58d9928aac4 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 0d02008e68c6e23dacc67015461c8f90 |
| Package / Case: | 0d02008e68c6e23dacc67015461c8f90 |
