SIE812DF-T1-E3

SIE812DF-T1-E3

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SIE812DF-T1-E3
Описание:
MOSFET N-CH 40V 60A 10POLARPAK
Упаковка:
Tape & Reel (TR)
Datasheet:
SIE812DF-T1-E3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIE812DF-T1-E3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:1551d0db07ff2a9a5117bf21afa2832a
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:1510359b85c70b61364f571e96ee3ae4
Vgs(th) (Max) @ Id:66756bbbd2b15b665d5248f5ca1758a1
Gate Charge (Qg) (Max) @ Vgs:8b77adac0ebc81e22c54854abccb3aea
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:a2a9ee751be5f2dc8f069ca7050eb66f
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):b21ad21cb623ce9b0f07c58d9928aac4
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:0d02008e68c6e23dacc67015461c8f90
Package / Case:0d02008e68c6e23dacc67015461c8f90
In Stock: 0
Stock:
0 Can Ship Immediately
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