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See Product Specifications
| номер части: | SIHB100N60E-GE3 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Vishay Siliconix |
| Упаковка: | Tube |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 9b63fe166715207d51445c226ada9c46 |
| Current - Continuous Drain (Id) @ 25°C: | b5a4f17035c9cf549f5adf4038dff86d |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | 1a8a8f35e05db70afe5f1f653a18a095 |
| Vgs(th) (Max) @ Id: | aa9c33afb123e4299b76ff79e98e6369 |
| Gate Charge (Qg) (Max) @ Vgs: | 9e541cbc895757398ae8d0144a8ced7d |
| Vgs (Max): | 972af1bbf385e6f2ec41d2be6228bd7e |
| Input Capacitance (Ciss) (Max) @ Vds: | 3c6235ddf402b11904c3daf6c04f2bb7 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | ae6827e9bf6146235586a6342624c5af |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | bf4aa032e4c992412ea226c67524cac7 |
| Package / Case: | 99446f4470b43888d0c78d7d2cdfc956 |
