SIHB17N80AE-GE3

SIHB17N80AE-GE3

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SIHB17N80AE-GE3
Описание:
MOSFET N-CH 800V 15A D2PAK
Упаковка:
Tube
Datasheet:
SIHB17N80AE-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIHB17N80AE-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):faca79d8bea430c6302af6f2e2f59d12
Current - Continuous Drain (Id) @ 25°C:34f27d027764756cd9f657d693b9fb9c
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:6b13ca8f41a1f8eeb1fbcdd9a6cd108e
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:a65a653621dd95f8547d805115f985c8
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:6f4a8eb758711e4f388695d9e3f41a61
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):56fc246452e0fb2c9401254c57f3ae05
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:bf4aa032e4c992412ea226c67524cac7
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 1000
Stock:
1000 Can Ship Immediately
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