SIHD1K4N60E-GE3

SIHD1K4N60E-GE3

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SIHD1K4N60E-GE3
Описание:
MOSFET N-CH 600V 4.2A TO252AA
Упаковка:
Bulk
Datasheet:
SIHD1K4N60E-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIHD1K4N60E-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:9ba7be8417deb4a3d61418c73f7398ad
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:e25367baae02a4b608f330c52f2c897c
Vgs(th) (Max) @ Id:aa9c33afb123e4299b76ff79e98e6369
Gate Charge (Qg) (Max) @ Vgs:fec874288047bf77a1c98d9a273164eb
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:9b391ecaa9efda35d79d96fe07f844da
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):c536ccddca9c99653f1af1372ed95f08
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:eea751cf5793e0f440e103a003404f48
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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