SIHD2N80AE-GE3

SIHD2N80AE-GE3

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SIHD2N80AE-GE3
Описание:
MOSFET N-CH 800V 2.9A DPAK
Упаковка:
Tube
Datasheet:
SIHD2N80AE-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIHD2N80AE-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):faca79d8bea430c6302af6f2e2f59d12
Current - Continuous Drain (Id) @ 25°C:19a259423dd9dfac9c54b271ed516127
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:e31f437ec11cf5f01dd44498cc1a27e3
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:573b3298b0aace1e6062c0593293d386
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:d669a4430f9e05fbc59948a440b4c977
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):e6115e6b64f7d623eb1f668cebc67c58
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:7ada2e7f7b50fcad7566a70926a057cb
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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