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See Product Specifications
| номер части: | SIHD6N80AE-GE3 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Vishay Siliconix |
| Упаковка: | Tube |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | faca79d8bea430c6302af6f2e2f59d12 |
| Current - Continuous Drain (Id) @ 25°C: | e3f0256b3bf60e25c65a2d4605b7a276 |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | f01e39f778dd8520d3ce70f275ea80b7 |
| Vgs(th) (Max) @ Id: | 9238c44d66e9d51854326c16b3397896 |
| Gate Charge (Qg) (Max) @ Vgs: | d1631413d5452f685998e0bfb5abcd8d |
| Vgs (Max): | 972af1bbf385e6f2ec41d2be6228bd7e |
| Input Capacitance (Ciss) (Max) @ Vds: | f3fd1b0d3e66eae041082165b5e6b590 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | e6115e6b64f7d623eb1f668cebc67c58 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 7ada2e7f7b50fcad7566a70926a057cb |
| Package / Case: | d6d5b809beb9f171e5b4097664b4dd95 |
