SIHD7N60ET5-GE3

SIHD7N60ET5-GE3

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SIHD7N60ET5-GE3
Описание:
MOSFET N-CH 600V 7A TO252AA
Упаковка:
Tape & Reel (TR)
Datasheet:
SIHD7N60ET5-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIHD7N60ET5-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:3d28ab81c1ea57e4bc54bda355458666
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:f22523cffd0b3a669e954d4f9edd79c2
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:b6ab5da133ad4bb28468094ad6d872e7
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:e230725c3980b71bc4d2db9631b2a647
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):44b670c085128b792b06ef64b5c30aa8
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:7ada2e7f7b50fcad7566a70926a057cb
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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