SIHF35N60E-GE3

SIHF35N60E-GE3

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SIHF35N60E-GE3
Описание:
MOSFET N-CHANNEL 600V 32A TO220
Упаковка:
Tube
Datasheet:
SIHF35N60E-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIHF35N60E-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:d7434a36c69b7f97b848da7c2ae22afd
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:761d3db86d2a0a8b7b641ea9f7104dfb
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:48181fc00b4a2d6a2f4c755721c21084
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:3fdd01da98760e9f56b0932c866f9e90
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):b86b12b79f51afab9655c8e34e6af46b
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:2e5915171627bd54d56c6fb913807af8
Package / Case:a02e0d1a928de3366340ceae094aecd8
In Stock: 0
Stock:
0 Can Ship Immediately
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