SIHG30N60E-GE3

SIHG30N60E-GE3

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SIHG30N60E-GE3
Описание:
MOSFET N-CH 600V 29A TO247AC
Упаковка:
Tube
Datasheet:
SIHG30N60E-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIHG30N60E-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:bef208545980877d37ab67fe6329896c
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:979a753c22f8f31effe19fee012c1a57
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:95cc654d08caf680eb065518f687f3f9
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:3cd11ffeec094bb686bffaf1e9d2c3e0
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):2f8fb1b958a63c9c2907182cbf2e2287
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:ff15466ab005cbc6ba41396649fce236
Package / Case:748a8539a6c3c7dbdb455218c72fac40
In Stock: 59
Stock:
59 Can Ship Immediately
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