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See Product Specifications
| номер части: | SIHG33N60E-GE3 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Vishay Siliconix |
| Упаковка: | Tube |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 9b63fe166715207d51445c226ada9c46 |
| Current - Continuous Drain (Id) @ 25°C: | 9ec68034a8e930faf0d8a3926bb7aecc |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | ec8d12aca41e962f3a1a02140ac4a5cc |
| Vgs(th) (Max) @ Id: | 9238c44d66e9d51854326c16b3397896 |
| Gate Charge (Qg) (Max) @ Vgs: | 789bf5e31e323fc83c66ab09e5c299d7 |
| Vgs (Max): | 972af1bbf385e6f2ec41d2be6228bd7e |
| Input Capacitance (Ciss) (Max) @ Vds: | 12655a11c519d34a82d2ef10b637c19f |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 98fe293bad73f8f9d10b4fdf04da54d4 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | ff15466ab005cbc6ba41396649fce236 |
| Package / Case: | 748a8539a6c3c7dbdb455218c72fac40 |
