SIHG33N65E-GE3

SIHG33N65E-GE3

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SIHG33N65E-GE3
Описание:
MOSFET N-CH 650V 32.4A TO247AC
Упаковка:
Tube
Datasheet:
SIHG33N65E-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIHG33N65E-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:f0114b3a3f4883a08b3f26f9357621cd
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:a1a132dac17ef934b2e7efd8aa834dae
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:3c579065006655aef133e0d4acf85935
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:75254cde6d9ef9ccb5fbb214d689b8c6
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):98bca11be491fc86c63d6889ed7ef9d6
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:ff15466ab005cbc6ba41396649fce236
Package / Case:748a8539a6c3c7dbdb455218c72fac40
In Stock: 0
Stock:
0 Can Ship Immediately
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