SIHJ690N60E-T1-GE3

SIHJ690N60E-T1-GE3

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SIHJ690N60E-T1-GE3
Описание:
MOSFET N-CH 600V 5.6A PPAK SO-8
Упаковка:
Tape & Reel (TR)
Datasheet:
SIHJ690N60E-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIHJ690N60E-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:28552509d27b5d0ca19807d08a507dc0
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:c78273e6d8b747addf04db8298ac1810
Vgs(th) (Max) @ Id:aa9c33afb123e4299b76ff79e98e6369
Gate Charge (Qg) (Max) @ Vgs:db83709cc1aa640e30cdddd177064057
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:480f6037547ed709b693d1800fb57981
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):af93033d5a58ca334eaba06234e57460
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:cdb17de75fc2484291d63ea33c94254f
Package / Case:cdb17de75fc2484291d63ea33c94254f
In Stock: 4
Stock:
4 Can Ship Immediately
  • Делиться:
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