SIHP28N65EF-GE3

SIHP28N65EF-GE3

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SIHP28N65EF-GE3
Описание:
MOSFET N-CH 650V 28A TO220AB
Упаковка:
Tube
Datasheet:
SIHP28N65EF-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIHP28N65EF-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:eb744f26e77c633f46572ea54111f2c4
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:2e530dead9e9ef6364127a7fff3de485
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:7fe1ed0ddd2c3fd70ae194137735546c
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:d04b187cff78ea04e7cf37a88a7ec0a6
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):2f8fb1b958a63c9c2907182cbf2e2287
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:9b3b590b14408ced9e56cc56696084a1
Package / Case:46bb638de2ea693de650d7f1c3115468
In Stock: 0
Stock:
0 Can Ship Immediately
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