SIJ478DP-T1-GE3

SIJ478DP-T1-GE3

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SIJ478DP-T1-GE3
Описание:
MOSFET N-CH 80V 60A PPAK SO-8
Упаковка:
Tape & Reel (TR)
Datasheet:
SIJ478DP-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIJ478DP-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):ebd7aaeec2792ddf9fe1af48370ec717
Current - Continuous Drain (Id) @ 25°C:1551d0db07ff2a9a5117bf21afa2832a
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:5988777e9a5baadf580824b18222ad1c
Vgs(th) (Max) @ Id:50f9dd8df55d79a3e312d76bbd14e5ef
Gate Charge (Qg) (Max) @ Vgs:64ee8dd5f85654f637492b50eb905c25
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:40c5595c7a7895ff75cd7bf45f3cd453
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):6cf59f5f60d6dd30e091b1b39e79b1a0
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:cdb17de75fc2484291d63ea33c94254f
Package / Case:cdb17de75fc2484291d63ea33c94254f
In Stock: 0
Stock:
0 Can Ship Immediately
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