SIR106DP-T1-RE3

SIR106DP-T1-RE3

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SIR106DP-T1-RE3
Описание:
MOSFET N-CH 100V 16.1A PPAK
Упаковка:
Tape & Reel (TR)
Datasheet:
SIR106DP-T1-RE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIR106DP-T1-RE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:1308c9a78240e6b7070a81f92461fc35
Drive Voltage (Max Rds On, Min Rds On):629920a74232f30d2b06ff2b54267c3b
Rds On (Max) @ Id, Vgs:649d91d7f031c9f170936149b092229e
Vgs(th) (Max) @ Id:0bcaa49d6e8ca30aef2231ea4bd13d5f
Gate Charge (Qg) (Max) @ Vgs:be69521523ed1944c9553e3d8fbb478f
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:c00811c23dbdf8d6857b2df8234a19fe
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):2bc24f3d36b8db4aa4c6887836a9f0ca
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:cdb17de75fc2484291d63ea33c94254f
Package / Case:cdb17de75fc2484291d63ea33c94254f
In Stock: 0
Stock:
0 Can Ship Immediately
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