SIR184LDP-T1-RE3

SIR184LDP-T1-RE3

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SIR184LDP-T1-RE3
Описание:
N-CHANNEL 60 V (D-S) MOSFET POWE
Упаковка:
Tape & Reel (TR)
Datasheet:
SIR184LDP-T1-RE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIR184LDP-T1-RE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:eb7cffe6f847132ac3a0e9a618f13917
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:8df2022e4c8e6dd94cb16a58b1b3c91d
Vgs(th) (Max) @ Id:66756bbbd2b15b665d5248f5ca1758a1
Gate Charge (Qg) (Max) @ Vgs:79db47b1a885b65d2e569ae4c79d197d
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:2e084a98b1d0e6e53524312cb22e8107
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):467fe4510de33900d86f64b3fd716385
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:cdb17de75fc2484291d63ea33c94254f
Package / Case:cdb17de75fc2484291d63ea33c94254f
In Stock: 0
Stock:
0 Can Ship Immediately
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