SIR412DP-T1-GE3

SIR412DP-T1-GE3

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SIR412DP-T1-GE3
Описание:
MOSFET N-CH 25V 20A PPAK SO-8
Упаковка:
Tape & Reel (TR)
Datasheet:
SIR412DP-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIR412DP-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):622fb57dec9cae5648afabcd559f8856
Current - Continuous Drain (Id) @ 25°C:44fb8dcca168a71f877964651b9b44aa
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:5641f34e7c257489d10039aa78d2f285
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:a230bee065da054ea2538ec7bec29016
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:2ac289ba9c21e812600d442d24538fc4
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):a9c0c32774452340d72512f201ae9d0a
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:cdb17de75fc2484291d63ea33c94254f
Package / Case:cdb17de75fc2484291d63ea33c94254f
In Stock: 0
Stock:
0 Can Ship Immediately
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