SIR584DP-T1-RE3

SIR584DP-T1-RE3

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SIR584DP-T1-RE3
Описание:
N-CHANNEL 80 V (D-S) MOSFET POWE
Упаковка:
Tape & Reel (TR)
Datasheet:
SIR584DP-T1-RE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIR584DP-T1-RE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):ebd7aaeec2792ddf9fe1af48370ec717
Current - Continuous Drain (Id) @ 25°C:680b29595de15379f118b413fad5b575
Drive Voltage (Max Rds On, Min Rds On):629920a74232f30d2b06ff2b54267c3b
Rds On (Max) @ Id, Vgs:550ade9ea9f28c9cab94da9528ba1b14
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:ec7ed06369aef779c1b881719a9ae5ce
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:2b5e973a918848d33c0d517ebf852475
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):361f45fd25e760fbf85ceb25e6d59d93
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:cdb17de75fc2484291d63ea33c94254f
Package / Case:cdb17de75fc2484291d63ea33c94254f
In Stock: 0
Stock:
0 Can Ship Immediately
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