SIR616DP-T1-GE3

SIR616DP-T1-GE3

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SIR616DP-T1-GE3
Описание:
MOSFET N-CH 200V 20.2A PPAK SO-8
Упаковка:
Tape & Reel (TR)
Datasheet:
SIR616DP-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIR616DP-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):b86aa01bc1f9484a191794819edcfc06
Current - Continuous Drain (Id) @ 25°C:70832f3c1c13eed642f1954a89cf0e4c
Drive Voltage (Max Rds On, Min Rds On):629920a74232f30d2b06ff2b54267c3b
Rds On (Max) @ Id, Vgs:b8f27806ce2d0aae9bb908fea2c6918d
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:4c02cff3f44589de7260f3154b81b885
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:69fec1b68b3004991f3937371a161f66
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):f19e87938fb156c3d22c87ecb200167e
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:cdb17de75fc2484291d63ea33c94254f
Package / Case:cdb17de75fc2484291d63ea33c94254f
In Stock: 0
Stock:
0 Can Ship Immediately
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