SIR638DP-T1-GE3

SIR638DP-T1-GE3

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SIR638DP-T1-GE3
Описание:
MOSFET N-CH 40V 100A PPAK SO-8
Упаковка:
Tape & Reel (TR)
Datasheet:
SIR638DP-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIR638DP-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:4cd988b83fc990b9e8358853bdd4f330
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:af8e798c2fb6617f1bc4ccc9aa47f925
Vgs(th) (Max) @ Id:d2c672ec0f8556ce03313315edf78999
Gate Charge (Qg) (Max) @ Vgs:3c2841195d509f9d02f1e13bf36fb74e
Vgs (Max):f913025ad223365d0b25fdfdc38191e9
Input Capacitance (Ciss) (Max) @ Vds:9ea43445e1b4543a427f5cac9db916f1
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):9911ad4440d4c4ad12abf0c7ff0a94ad
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:cdb17de75fc2484291d63ea33c94254f
Package / Case:cdb17de75fc2484291d63ea33c94254f
In Stock: 0
Stock:
0 Can Ship Immediately
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