SIR646DP-T1-GE3

SIR646DP-T1-GE3

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SIR646DP-T1-GE3
Описание:
MOSFET N-CH 40V 60A PPAK SO-8
Упаковка:
Tape & Reel (TR)
Datasheet:
SIR646DP-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIR646DP-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:1551d0db07ff2a9a5117bf21afa2832a
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:4428a63d6c0e9beacfd0c8f097e77e94
Vgs(th) (Max) @ Id:17ed95a87d7b17ee9a8302d07765c7da
Gate Charge (Qg) (Max) @ Vgs:f1d77fd478746ab7cfbee6192f4977b1
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:c29cdcc80a55813fec18ff067ea408af
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):223840935b778540a4e1e78e7568e974
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:cdb17de75fc2484291d63ea33c94254f
Package / Case:cdb17de75fc2484291d63ea33c94254f
In Stock: 0
Stock:
0 Can Ship Immediately
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