SIR818DP-T1-GE3

SIR818DP-T1-GE3

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SIR818DP-T1-GE3
Описание:
MOSFET N-CH 30V 50A PPAK SO-8
Упаковка:
Tape & Reel (TR)
Datasheet:
SIR818DP-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIR818DP-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:de6fb719240c75cb73005d80d2170f88
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:a00448286797d1c39e3a3367e3836761
Vgs(th) (Max) @ Id:604e14281627abaa31ad75dce0e5c80f
Gate Charge (Qg) (Max) @ Vgs:505de5cb8965dd6650d8d61be47e9cc3
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:9d52ebef183b6822e0d731bb2900b26f
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):e923380139207e70e5daaae53082a9ec
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:cdb17de75fc2484291d63ea33c94254f
Package / Case:cdb17de75fc2484291d63ea33c94254f
In Stock: 0
Stock:
0 Can Ship Immediately
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