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See Product Specifications
| номер части: | SIS110DN-T1-GE3 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Vishay Siliconix |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 227b5c7c7a2ed2ea3da210ed0860030d |
| Current - Continuous Drain (Id) @ 25°C: | ea83e0f2e200e6ba35b1cccea81ca9e0 |
| Drive Voltage (Max Rds On, Min Rds On): | 629920a74232f30d2b06ff2b54267c3b |
| Rds On (Max) @ Id, Vgs: | b1a89b0f03fcd54aedb74d2b2bd35215 |
| Vgs(th) (Max) @ Id: | 9238c44d66e9d51854326c16b3397896 |
| Gate Charge (Qg) (Max) @ Vgs: | 5a6fea380f602f17400f5e0524af2d43 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | dc3a28454d1d9f9910dbe59deaa2f479 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | f226e263f828c627dcfc2f80e01268b2 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | dfb852836be599d955974e3fce090df4 |
| Package / Case: | dfb852836be599d955974e3fce090df4 |
