SIS447DN-T1-GE3

Images are for reference only
See Product Specifications

Mfr. #:

SIS447DN-T1-GE3

Mfr.:

Vishay Siliconix

Описание:

MOSFET P-CH 20V 18A PPAK1212-8

Упаковка:

Tape & Reel (TR)

Datasheet:

SIS447DN-T1-GE3 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	SIS447DN-T1-GE3
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Vishay Siliconix
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:	066e0bb89d610303369c0ca2b47f7252
Drive Voltage (Max Rds On, Min Rds On):	b076aa5277458f91fd2c66160075162b
Rds On (Max) @ Id, Vgs:	9ef0f8471642ce6c6dac29b9cd86cdf7
Vgs(th) (Max) @ Id:	b84520e401b6763187bb539da6d1dfbf
Gate Charge (Qg) (Max) @ Vgs:	c4cc8ce33f4fc1a8001f26c2523328da
Vgs (Max):	ed5450af4f622d5d61945c0592c793a8
Input Capacitance (Ciss) (Max) @ Vds:	da2db267fa40f2d49f489406ca047298
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	f19e87938fb156c3d22c87ecb200167e
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	dfb852836be599d955974e3fce090df4
Package / Case:	dfb852836be599d955974e3fce090df4