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See Product Specifications
| номер части: | SISA10BDN-T1-GE3 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Vishay Siliconix |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 6f065265b5ad79aa8b78335bb14c6420 |
| Current - Continuous Drain (Id) @ 25°C: | 966bc5901eb8edbdd965dac46a2d1b0f |
| Drive Voltage (Max Rds On, Min Rds On): | 214881f189d1d05281deda79f8c1bf77 |
| Rds On (Max) @ Id, Vgs: | 1c1d06f4badf8c5b7021d48cb4f8cd5e |
| Vgs(th) (Max) @ Id: | 604e14281627abaa31ad75dce0e5c80f |
| Gate Charge (Qg) (Max) @ Vgs: | 01c422600f0eb39e6e72a6e19c834839 |
| Vgs (Max): | f913025ad223365d0b25fdfdc38191e9 |
| Input Capacitance (Ciss) (Max) @ Vds: | aa726616785ee6cded27b40a93817720 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 6a56dcb5e90e340328e77acd3cd9cb99 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | dfb852836be599d955974e3fce090df4 |
| Package / Case: | dfb852836be599d955974e3fce090df4 |
