SISA10BDN-T1-GE3

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See Product Specifications

Mfr. #:

SISA10BDN-T1-GE3

Mfr.:

Vishay Siliconix

Описание:

N-CHANNEL 30-V (D-S) MOSFET POWE

Упаковка:

Tape & Reel (TR)

Datasheet:

SISA10BDN-T1-GE3 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	SISA10BDN-T1-GE3
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Vishay Siliconix
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	966bc5901eb8edbdd965dac46a2d1b0f
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	1c1d06f4badf8c5b7021d48cb4f8cd5e
Vgs(th) (Max) @ Id:	604e14281627abaa31ad75dce0e5c80f
Gate Charge (Qg) (Max) @ Vgs:	01c422600f0eb39e6e72a6e19c834839
Vgs (Max):	f913025ad223365d0b25fdfdc38191e9
Input Capacitance (Ciss) (Max) @ Vds:	aa726616785ee6cded27b40a93817720
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	6a56dcb5e90e340328e77acd3cd9cb99
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	dfb852836be599d955974e3fce090df4
Package / Case:	dfb852836be599d955974e3fce090df4