SISA18ADN-T1-GE3

SISA18ADN-T1-GE3

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SISA18ADN-T1-GE3
Описание:
MOSFET N-CH 30V 38.3A PPAK1212-8
Упаковка:
Tape & Reel (TR)
Datasheet:
SISA18ADN-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SISA18ADN-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:cb4aa9922695ecf670f6b8d44bb675f7
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:558d9598872936395de91a78c1342e88
Vgs(th) (Max) @ Id:604e14281627abaa31ad75dce0e5c80f
Gate Charge (Qg) (Max) @ Vgs:2577e92a4150b6f40dbee1e653a00f00
Vgs (Max):f913025ad223365d0b25fdfdc38191e9
Input Capacitance (Ciss) (Max) @ Vds:86fb5b953ce6f89f21b907d718279918
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):75fbe8f769bb72dcc0075febe9d112d2
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:dfb852836be599d955974e3fce090df4
Package / Case:dfb852836be599d955974e3fce090df4
In Stock: 1185
Stock:
1185 Can Ship Immediately
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