SISH101DN-T1-GE3

SISH101DN-T1-GE3

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SISH101DN-T1-GE3
Описание:
MOSFET P-CH 30V 16.9A/35A PPAK
Упаковка:
Tape & Reel (TR)
Datasheet:
SISH101DN-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SISH101DN-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:d3b8f956161b36f82a057b14cc904072
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:adbaabf1e4039de53ea5427b17f9ac10
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:6ff8ff0c67762f7e5439e208394b1efb
Vgs (Max):fbd977bb3518279a4b9189d4188fb888
Input Capacitance (Ciss) (Max) @ Vds:a849cc8df8c71f42a341773351bfcfa9
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):ff986e09e726234998f68e9a94cfb7e2
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:d5f1963fdfe632ee20cad40682288c93
Package / Case:d5f1963fdfe632ee20cad40682288c93
In Stock: 5240
Stock:
5240 Can Ship Immediately
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