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See Product Specifications
| номер части: | SISH112DN-T1-GE3 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Vishay Siliconix |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 6f065265b5ad79aa8b78335bb14c6420 |
| Current - Continuous Drain (Id) @ 25°C: | 2768820b7eb8f891fa08b94180ef6a2f |
| Drive Voltage (Max Rds On, Min Rds On): | 214881f189d1d05281deda79f8c1bf77 |
| Rds On (Max) @ Id, Vgs: | f4d49ecc004c535b58b033de9e0c41a0 |
| Vgs(th) (Max) @ Id: | f710eedc1bf5fdb1a1e1a08d92eb0502 |
| Gate Charge (Qg) (Max) @ Vgs: | d6154a9e788ccf17520081c399544acd |
| Vgs (Max): | ed5450af4f622d5d61945c0592c793a8 |
| Input Capacitance (Ciss) (Max) @ Vds: | 95e0abccb9ccfdb743ef6414a2acdf36 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 79ced615889a336e16193ff026970ba9 |
| Operating Temperature: | d62d1130aaab6cd79cc1c8ef0f444bae |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | d5f1963fdfe632ee20cad40682288c93 |
| Package / Case: | d5f1963fdfe632ee20cad40682288c93 |
