SISH402DN-T1-GE3

SISH402DN-T1-GE3

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SISH402DN-T1-GE3
Описание:
MOSFET N-CH 30V 19A/35A PPAK
Упаковка:
Tape & Reel (TR)
Datasheet:
SISH402DN-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SISH402DN-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:76032cbc8155aeea614e368e3e3ce93d
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:fa0ec5b4870e421566381eed2b789fbd
Vgs(th) (Max) @ Id:17ed95a87d7b17ee9a8302d07765c7da
Gate Charge (Qg) (Max) @ Vgs:eda12ce59387147f71becfad75fd268d
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:c0b0ea5d0f75d44f2fb58857363206f8
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):1bbf3fadf2141ba7a837f58c77ecdb3f
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:d5f1963fdfe632ee20cad40682288c93
Package / Case:d5f1963fdfe632ee20cad40682288c93
In Stock: 2
Stock:
2 Can Ship Immediately
  • Делиться:
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