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See Product Specifications
| номер части: | SISH410DN-T1-GE3 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Vishay Siliconix |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 1d4b1d1d0414ed964cb9de7f5a150f63 |
| Current - Continuous Drain (Id) @ 25°C: | 7eb41cba2518fb10900b7315ca265211 |
| Drive Voltage (Max Rds On, Min Rds On): | 214881f189d1d05281deda79f8c1bf77 |
| Rds On (Max) @ Id, Vgs: | 06d3770f4801b9fe7b66351f1e3ede70 |
| Vgs(th) (Max) @ Id: | bae68a70e94fb31c33c772f4fdf89b99 |
| Gate Charge (Qg) (Max) @ Vgs: | 79db47b1a885b65d2e569ae4c79d197d |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 6db21b096ca72574b07b1aa75388ba50 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 1bbf3fadf2141ba7a837f58c77ecdb3f |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | d5f1963fdfe632ee20cad40682288c93 |
| Package / Case: | d5f1963fdfe632ee20cad40682288c93 |
