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See Product Specifications
| номер части: | SISH892BDN-T1-GE3 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Vishay Siliconix |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 227b5c7c7a2ed2ea3da210ed0860030d |
| Current - Continuous Drain (Id) @ 25°C: | 88de84af9002813a6e6cde7fc3d24ae9 |
| Drive Voltage (Max Rds On, Min Rds On): | 214881f189d1d05281deda79f8c1bf77 |
| Rds On (Max) @ Id, Vgs: | 0a38baf8cbd2cf2369f68a804b5879e7 |
| Vgs(th) (Max) @ Id: | 604e14281627abaa31ad75dce0e5c80f |
| Gate Charge (Qg) (Max) @ Vgs: | f11b73e3e08fbd8ad8ca70b6cce477ac |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 4de9b7d3ff780042e7ed7ca47cd46adc |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 233117da1cfd15098ca952f712b013d8 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 8bbbeed690bb4914da195644f5724eda |
| Package / Case: | cdb17de75fc2484291d63ea33c94254f |
