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See Product Specifications
| номер части: | SISS10ADN-T1-GE3 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Vishay Siliconix |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 628cbc3e45d5bacb32414a526acf56ef |
| Current - Continuous Drain (Id) @ 25°C: | 901aaa25625c0a0111d7b2a1ead44f9b |
| Drive Voltage (Max Rds On, Min Rds On): | 214881f189d1d05281deda79f8c1bf77 |
| Rds On (Max) @ Id, Vgs: | 4cbcc82832fac80c622bd94fb9e95f99 |
| Vgs(th) (Max) @ Id: | 604e14281627abaa31ad75dce0e5c80f |
| Gate Charge (Qg) (Max) @ Vgs: | 8efc990a780d589424d353135dbf1bb9 |
| Vgs (Max): | f913025ad223365d0b25fdfdc38191e9 |
| Input Capacitance (Ciss) (Max) @ Vds: | 6edd09194ed275ca42f52d0e7ea0c548 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 70b043e0ca5adc24d64ecdf8e0d42393 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | fbd9426cc15e84a26545aa4be6dd2dad |
| Package / Case: | fbd9426cc15e84a26545aa4be6dd2dad |
