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See Product Specifications
| номер части: | SISS26DN-T1-GE3 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Vishay Siliconix |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 5568a11e95c42251b4839598cb5b4518 |
| Current - Continuous Drain (Id) @ 25°C: | 1551d0db07ff2a9a5117bf21afa2832a |
| Drive Voltage (Max Rds On, Min Rds On): | 9271e32297e2bbc49bb4aadcd764fb6f |
| Rds On (Max) @ Id, Vgs: | f1965ef51c60c0e01c48e4fe9fd6902d |
| Vgs(th) (Max) @ Id: | 034ee5513b963bb3bc7e437e4afad038 |
| Gate Charge (Qg) (Max) @ Vgs: | 6c34ab415af6e1fcb39f91c86ab02ea4 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | de0f8bc7b8ebae49c0f5f43736f0e09f |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 900854619ae87891086e9bb024e70964 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | fbd9426cc15e84a26545aa4be6dd2dad |
| Package / Case: | fbd9426cc15e84a26545aa4be6dd2dad |
